We have synthesized dye sensitized Sb doped Bi2 (Te1-xSex)3 and without dye sensitized Sb doped Bi2(Te1-xSex)3 thin films by APT on both regular and fluorine tinâ€“oxide (FTO) coated glass substrate. These films were characterized by X-ray diffraction (XRD), optical absorption, SEM, EDAX, AFM, XPS and electro chemical photovoltaical (ECPV) techniques. XRD study revealed that the films were nanocrystalline in nature with rhobohedral phase. ECPV of Sb doped Bi2(Te1-xSex)3 thin films without dye were measured. Further these films were loaded with Ru (II) dye and their ECPV properties were measured. The dye sensitized Sb doped Bi2(Te1-xSex)3 / Sb doped Bi2(Te1-xSex)3 without dye act as an working electrode, Platinum coated FTO as a counter electrode and Iodide / triiodide as an electrolyte, with illumination intensity 28m/w/cm2 were used. Our results revels that the performance of ECPV cell recorded for dye sensitized Sb doped Bi2(Te1-xSex)3 thin films was found to be maximum as compared to Sb doped Bi2(Te1-xSex)3 thin films without dye, due to maximum light absorption by dye sensitized photo electrodes.
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